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Référence fabricant

IR2106STRPBF

IR2106S Series Dual 25 V Surface Mount High and Low Side Driver - SOIC-8

Modèle ECAD:
Nom du fabricant: Infineon
Emballage standard:
Product Variant Information section
Code de date:
Product Specification Section
Infineon IR2106STRPBF - Caractéristiques techniques
Attributes Table
Configuration: High and Low Side
No of Outputs: Dual
Peak Output Current: 200mA
Supply Voltage-Max: 25V
Rated Power Dissipation: 0.625W
Quiescent Current: 180µA
Turn-off Delay Time: 280ns
Turn-on Delay Time: 300ns
Rise Time: 220ns
Fall Time: 80ns
Operating Temp Range: -55°C to +150°C
Style d'emballage :  SOIC-8
Méthode de montage : Surface Mount
Fonctionnalités et applications
The IR2106STRPBF is a high voltage, high speed power MOSFET and IGBT driver, available in surface mount SOIC-8 package.

This device comes with independent high and low side referenced output channels. It feature a high pulse current buffer stage designed for minimum driver cross-conduction.

Features:

  • Floating channel designed for bootstrap operation
  • Fully operational to +600 V
  • Tolerant to negative transient voltage dV/dt immune
  • Gate drive supply range from 10 to 20 V (IR2106(4))
  • Undervoltage lockout for both channels
  • 3.3 V, 5 V and 15 V input logic compatible
  • Matched propagation delay for both channels
  • Logic and power ground +/- 5V offset.
  • Lower di/dt gate driver for better noise immunity
  • Outputs in phase with inputs (IR2106)
  • Also available LEAD-FREE
Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
20 Semaines
Commande minimale :
2500
Multiples de :
2500
Total 
1 500,00 $
USD
Quantité
Prix unitaire
2 500
$0.60
5 000+
$0.59
Product Variant Information section