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STMicroelectronics | STGW20NC60VD

Manufacturer Part #

STGW20NC60VD

STGW20NC60VD Series 600 V 30 A N-Channel Very Fast PowerMESH GBT - TO-247

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STGW20NC60VD - Technical Attributes
Attributes Table
CE Voltage-Max: 600V
Collector Current @ 25C: 60A
Power Dissipation-Tot: 200W
Turn-on Delay Time: 31ns
Turn-off Delay Time: 100ns
Package Style:  TO-247-3
Mounting Method: Flange Mount
Features & Applications

The STGW20NC60VD is a N-channel very fast Insulated Gate Bipolar Transistor with Ultrafast diode. It utilizes the advanced Power MESH process resulting in an excellent trade-off between switching performance and low on-state behavior.

Features:

  • High current capability
  • High frequency operation up to 50 KHz
  • Very soft ultra fast recovery antiparallel diode

Applications:

  • High frequency inverters, UPS
  • Motor drive
  • SMPS and PFC in both hard switch and resonant topologies
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
14 Weeks
Minimum Order:
600
Multiple Of:
30
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$936.00
USD
Quantity
Unit Price
30
$1.61
120
$1.59
600
$1.56
1,200
$1.55
3,750+
$1.52
Product Variant Information section