onsemi | FDC653N

The FDC653N is a 30V 0.035 Ω N-Channel Enhancement Mode Field Effect Transistor available in a SSOT-6 Package .

This N-Channel enhancement mode power field effect transistors is high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

Features:

• 5 A, 30 V. RDS(ON) = 0.035 Ω @ VGS = 10 V, RDS(ON) = 0.055 Ω @ VGS = 4.5 V.
• Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities.
• High density cell design for extremely low RDS(ON).
• Exceptional on-resistance and maximum DC current capability.

Applications:

• AC-DC Merchant Power Supply - Video game console, flat Panel TV, DVR, STB
• External AC-DC Merchant Power Supply - Wireless Communications
• Wireless LAN Card & Broadband Access
• Military & Civil Aerospace
• Routers & LAN Switches
• Medical Electronics/Devices