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Référence fabricant

FDMS7650

30/20V NCH POWER TRENCH MOSFET; CLIPBONDING

Modèle ECAD:
Nom du fabricant: onsemi
Emballage standard:
Product Variant Information section
Code de date:
Product Specification Section
onsemi FDMS7650 - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 0.99mΩ
Rated Power Dissipation: 2.5|W
Qg Gate Charge: 149nC
Style d'emballage :  POWER 56-8
Méthode de montage : Surface Mount
Fonctionnalités et applications

The FDMS7650 is a N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge and extremely low rDS(on).

Features:

  • Max rDS(on) = 0.99 mO at VGS = 10 V, ID = 36 A
  • Max rDS(on) = 1.55 mO at VGS = 4.5 V, ID = 32 A
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS Compliant

Applications:

  • OringFET
  • Synchronous rectifier

View the Complete family of FDMS Mosfet Transistors

Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
22 Semaines
Commande minimale :
3000
Multiples de :
3000
Total 
4 650,00 $
USD
Quantité
Prix unitaire
3 000+
$1.55
Product Variant Information section