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Référence fabricant

FDS6673BZ

Single P-Channel -30 V 2.5 W 65 nC PowerTrench Surface Mount Mosfet - SOIC-8

Modèle ECAD:
Nom du fabricant: onsemi
Emballage standard:
Product Variant Information section
Code de date:
Product Specification Section
onsemi FDS6673BZ - Caractéristiques techniques
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: -30V
Drain-Source On Resistance-Max: 12mΩ
Rated Power Dissipation: 2.5W
Qg Gate Charge: 65nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: -14.5A
Turn-on Delay Time: 14ns
Turn-off Delay Time: 225ns
Rise Time: 16ns
Fall Time: 105ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: -3V
Technology: PowerTrench
Height - Max: 1.75mm
Length: 4.9mm
Input Capacitance: 3500pF
Style d'emballage :  SOIC-8
Méthode de montage : Surface Mount
Fonctionnalités et applications

The FDS6673BZ is a 30 V 7.8 mΩ P-Channel MOSFET is produced using advanced Power Trench process that has been especially tailored to minimize the on-state resistance.

Features:

  • Max rDS(on) = 7.8 mΩ, VGS = -10 V, ID = -14.5 A
  • Max rDS(on) = 12 mΩ, VGS = -4.5 V, ID = -12 A
  • Extended VGS range (-25 V) for battery applications
  • HBM ESD protection level of 6.5 kV typical (note 3)
  • High performance trench technology for extremely lowrDS(on)
  • High power and current handling capability
  • RoHS compliant 

Applications:

  • Power Management  
  • Load switching applications
  • Notebook Computers
  • Portable Battery Packsd
  • Medical Electronics/Devices
  • Military & Civil Aerospace
Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :Order inventroy details
2 500
Stock d'usine :Stock d'usine :
0
Délai d'usine :
12 Semaines
Commande minimale :
2500
Multiples de :
2500
Total 
1 200,00 $
USD
Quantité
Prix unitaire
2 500
$0.48
5 000
$0.47
10 000
$0.465
12 500+
$0.46
Product Variant Information section