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Infineon | IPP200N15N3GXKSA1

Codice produttore

IPP200N15N3GXKSA1

Single N-Channel 150 V 20 mOhm 31 nC OptiMOS™ Power Mosfet - TO-220-3

Modello ECAD:
Fabbricante: Infineon
Confezione Standard:
Product Variant Information section
Codice data:
Product Specification Section
Infineon IPP200N15N3GXKSA1 - Caratteristiche Tecniche
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 150V
Drain-Source On Resistance-Max: 20mΩ
Rated Power Dissipation: 150W
Qg Gate Charge: 23nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 50A
Turn-on Delay Time: 14ns
Turn-off Delay Time: 23ns
Rise Time: 11ns
Fall Time: 6ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3V
Technology: OptiMOS
Input Capacitance: 1820pF
Tipologia confezione:  TO-220-3 (TO-220AB)
Metodo di montaggio: Through Hole
Pricing Section
Stock globale:
0
Germania:
0
In ordine:
0
Stock in fabbrica:Stock in fabbrica:
0
Lead Time del produttore:
16 Weeks
Ordine minimo:
500
Multiplo di:
200
Totale
535,00 $
USD
Quantità
Prezzo unitario
200
1,07 $
600
1,06 $
800
1,05 $
2.000
1,04 $
3.000+
1,03 $
Product Variant Information section