text.skipToContent text.skipToNavigation

warning.svgOrders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

Truck-Icon.svgFree shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. IPP200N15N3GXKSA1

Infineon | IPP200N15N3GXKSA1

Manufacturer Part #

IPP200N15N3GXKSA1

Single N-Channel 150 V 20 mOhm 31 nC OptiMOS™ Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPP200N15N3GXKSA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 150V
Drain-Source On Resistance-Max: 20mΩ
Rated Power Dissipation: 150W
Qg Gate Charge: 23nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 50A
Turn-on Delay Time: 14ns
Turn-off Delay Time: 23ns
Rise Time: 11ns
Fall Time: 6ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3V
Technology: OptiMOS
Input Capacitance: 1820pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
500
Multiple Of:
200
Total
$615.00
USD
Quantity
Unit Price
200
$1.23
600
$1.22
1,000
$1.21
3,000
$1.20
5,000+
$1.18
Product Variant Information section