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Référence fabricant
IRF630NPBF
Single N-Channel 200 V 0.3 Ohm 35 nC HEXFET® Power Mosfet - TO-220-3
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :50 par Tube Style d'emballage :TO-220-3 (TO-220AB) | ||||||||||
| Code de date: | 2506 | ||||||||||
Infineon IRF630NPBF - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Detailed change information:Subject Phase out of Kyocera KEG300 mold compound for several assembly locations and change of lead finish from tin dip to electroplating at Tijuana, Mexico for dedicated TO220-3 & TO247-3 products.Reason:To ensure continuity of mold compound supply due to Kyocera KEG300 end of life and to further ensure our product performance with lead-free electroplating finish
Subject: Introduction of an additional wafer production at Infineon Technologies Kulim, Malaysia and change of wafer diameter from 150mm to 200mm for several G5.5 MOSFETReason: The wafer production of the affected products will be extended to Infineon Technologies Kulim, according to global Infineon production strategy.
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRF630NPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/it/p/semiconductors--discretes--transistors--mosfets/irf630npbf-infineon-9173903
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRF630NPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/it/p/semiconductors--discretes--transistors--mosfets/irf630npbf-infineon-9173903
Infineon IRF630NPBF - Caractéristiques techniques
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 200V |
| Drain-Source On Resistance-Max: | 0.3Ω |
| Rated Power Dissipation: | 82W |
| Qg Gate Charge: | 35nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 9.3A |
| Turn-on Delay Time: | 7.9ns |
| Turn-off Delay Time: | 27ns |
| Rise Time: | 14ns |
| Fall Time: | 15ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 4V |
| Technology: | Advanced Process Technology |
| Height - Max: | 9.02mm |
| Length: | 10.67mm |
| Input Capacitance: | 575pF |
| Style d'emballage : | TO-220-3 (TO-220AB) |
Emballages disponibles
Qté d'emballage(s) :
50 par Tube
Style d'emballage :
TO-220-3 (TO-220AB)