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Manufacturer Part #

IRLU120NPBF

Single N-Channel 100 V 0.265 Ohm 20 nC HEXFET® Power Mosfet - TO-251AA

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2511
Product Specification Section
Infineon IRLU120NPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 0.265Ω
Rated Power Dissipation: 48W
Qg Gate Charge: 20nC
Gate-Source Voltage-Max [Vgss]: 16V
Drain Current: 10A
Turn-on Delay Time: 4ns
Turn-off Delay Time: 23ns
Rise Time: 35ns
Fall Time: 22ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2V
Technology: Si
Height - Max: 6.22mm
Length: 6.73mm
Input Capacitance: 440pF
Package Style:  TO-251 (IPAK)
Mounting Method: Through Hole
Pricing Section
Global Stock:
15
USA:
15
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
15
Multiple Of:
1
Total
$4.95
USD
Quantity
Unit Price
75
$0.33
250
$0.32
1,000
$0.315
2,500
$0.31
10,000+
$0.295
Product Variant Information section