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Manufacturer Part #

SI7942DP-T1-GE3

DUAL N-CHANNEL 100-V (D-S) MOSFET

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SI7942DP-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 49mΩ
Rated Power Dissipation: 1.4|W
Qg Gate Charge: 16nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 3.8A
Turn-on Delay Time: 15ns
Turn-off Delay Time: 35ns
Rise Time: 15ns
Fall Time: 20ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Height - Max: 1.07mm
Length: 5.15mm
Package Style:  POWERPAK-SO-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
3,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
36 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$4,050.00
USD
Quantity
Unit Price
3,000+
$1.35
Product Variant Information section