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STMicroelectronics | STP10NM60N

Manufacturer Part #

STP10NM60N

N-Channel 650 V 0.55 Ohm Flange Mount MDmesh II Power MosFet - TO-220

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code: 1711
Product Specification Section
STMicroelectronics STP10NM60N - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 0.55Ω
Rated Power Dissipation: 70W
Qg Gate Charge: 19nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 10A
Turn-on Delay Time: 10ns
Turn-off Delay Time: 32ns
Rise Time: 12ns
Fall Time: 15ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: MDmesh
Input Capacitance: 540pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
90
USA:
90
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
14 Weeks
Minimum Order:
40
Multiple Of:
50
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$60.00
USD
Quantity
Unit Price
50
$1.50
200
$1.47
750
$1.45
1,500
$1.44
3,750+
$1.42
Product Variant Information section