text.skipToContent text.skipToNavigation

Truck-Icon.svg Free shipping within the continental US over $50. Conditions apply

warning.svg Orders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Silicon Carbide MOSFETs (SiC MOSFETs)
  6. IMDQ75R004M2HXTMA1

Infineon | IMDQ75R004M2HXTMA1

Manufacturer Part #

IMDQ75R004M2HXTMA1

CoolSiC Series 750 V 357 A 5 mOhm Single N-Channel SiC MOSFET - PG‑HDSOP‑22

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IMDQ75R004M2HXTMA1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 840V
Drain Current: 357A
Input Capacitance: 11844pF
Power Dissipation: 1499W
Operating Temp Range: -55°C to +175°C
Package Style:  HDSOP-22
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
52+Weeks
Minimum Order:
750
Multiple Of:
750
Total
$28,380.00
USD
Quantity
Unit Price
750+
$37.84
Product Variant Information section