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Manufacturer Part #

SCT20N120

N-Channel 1200 V 290 mΩ 20 A Flange Mount Silicon Carbide Power Mosfet - HiP247™

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code: 2101
Product Specification Section
STMicroelectronics SCT20N120 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 20A
Input Capacitance: 650pF
Power Dissipation: 175W
Operating Temp Range: -55°C to +200°C
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
304
USA:
304
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
4
Multiple Of:
1
Total
$25.48
USD
Quantity
Unit Price
4
$6.37
20
$6.30
75
$6.25
200
$6.21
750+
$6.12
Product Variant Information section