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Manufacturer Part #
TSSS2600
950 nm 100 mA ±25° Through Hole Infrared Emitting Diode
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| Mfr. Name: | Vishay | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:5000 per Bag Mounting Method:Through Hole | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
Vishay TSSS2600 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
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Vishay TSSS2600 - Technical Attributes
Attributes Table
| Wavelength: | 950nm |
| Angle of Half Intensity: | ±25° |
| Intensity: | 2.6mW/cm2 |
| Forward (Drive) Current: | 100mA |
| Forward Voltage: | 1.25V |
| Mounting Method: | Through Hole |
Features & Applications
The TSSS2600 is a infrared emitting diode. It Consist of 950 nm wavelengh in GaAs technology, molded in a miniature, clear plastic package with side view lens.
Features:
- Package type: leaded
- Package form: side view
- Dimensions (L x W x H in mm): 3.6 x 2.2 x 5
- Peak wavelength: λp = 950 nm
- High reliability
- High radiant power
- High radiant intensity
- Angle of half intensity: ? = ± 25°, horizontal
- Low forward voltage
- Suitable for high pulse current operation
- Good spectral matching with Si photodetectors
- Package matched with detector TEST2600
- Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
Applications:
Infrared source in miniature light barriers or reflective sensor systems with short transmission distances and low forward voltage requirements. Matching with silicon PIN photodiodes or phototransistors (e.g. TEST2600)
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
6 Weeks
Quantity
Unit Price
1
$0.245
125
$0.235
750
$0.225
1,500+
$0.22
Product Variant Information section
Available Packaging
Package Qty:
5000 per Bag
Mounting Method:
Through Hole