SIB452DK-T1-GE3 in Reel by Vishay | Mosfets | Future Electronics
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Manufacturer Part #

SIB452DK-T1-GE3

Single N-Channel 190 V 2.4 Ohms Surface Mount Power Mosfet - PowerPAK SC-75-6L

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2438
Product Specification Section
Vishay SIB452DK-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 190V
Drain-Source On Resistance-Max: 2.4Ω
Rated Power Dissipation: 13|W
Qg Gate Charge: 6.5nC
Package Style:  POWERPAK-SC-75-6L
Mounting Method: Surface Mount
Features & Applications
The SIB452DK-T1-GE3 is a N-Channel 190-V (D-S) MOSFET.

It has an Operating temperature ranges b/w -55 °C to 150 °C and it is available in a PowerPAK SC-75-6L-Single package.

Features:

  • Halogen-free 
  • TrenchFET® Power MOSFET
  • New Thermally Enhanced PowerPAK®SC-75 Package
    • Small Footprint Area
    • Low On-Resistance

Applications:

  • Boost Converter for Portable Devices
Read More...
Pricing Section
Global Stock:
3,000
USA:
3,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
13 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$795.00
USD
Quantity
Unit Price
3,000
$0.265
6,000
$0.26
15,000+
$0.255
Product Variant Information section