
Manufacturer Part #
SIB452DK-T1-GE3
Single N-Channel 190 V 2.4 Ohms Surface Mount Power Mosfet - PowerPAK SC-75-6L
Vishay SIB452DK-T1-GE3 - Product Specification
Shipping Information:
ECCN:
PCN Information:
Description of Change: To meet increasing demand with more flexibility for power MOSFETs, Vishay Siliconix announces the qualification of the new solder-plating site, Welnew-Shanghai, in Shanghai city, China. This full release of Welnew-Shnaghai applies to commercial product packages with copper lead-frame assembled in Simconix in Shanghai.Reason for Change: Manufacturing Capacity Expansion
Description of Change: .To meet increasing demand with more flexibility for power MOSFETs, Vishay Siliconix announces the qualification of the new solder-plating site, Welnew-Shanghai, in Shanghai city, China. This full release of Welnew-Shnaghai applies to commercial product packages with copper lead-frame assembled in Simconix in Shanghai.Welnew-Shanghai was founded in 2006 as a leading provider of Hall sensor products, semiconductor process service, and equipments.Welnew-Shanghai has achieved the certifications, including IATF-16949, ISO-9001, and ISO-14001.Reason for Change: Manufacturing Capacity Expansion
Part Status:
Vishay SIB452DK-T1-GE3 - Technical Attributes
Fet Type: | N-Ch |
Drain-to-Source Voltage [Vdss]: | 190V |
Drain-Source On Resistance-Max: | 2.4Ω |
Rated Power Dissipation: | 13|W |
Qg Gate Charge: | 6.5nC |
Package Style: | POWERPAK-SC-75-6L |
Mounting Method: | Surface Mount |
Features & Applications
Available Packaging
Package Qty:
3000 per Reel
Package Style:
POWERPAK-SC-75-6L
Mounting Method:
Surface Mount