
Manufacturer Part #
DMHC3025LSD-13
Dual N/P Channel 30 V 25 mΩ 11.7 nC H-Bridge Power Mosfet - SOIC-8
Product Specification Section
Diodes Incorporated DMHC3025LSD-13 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
Diodes Incorporated DMHC3025LSD-13 - Technical Attributes
Attributes Table
Fet Type: | Dual N/P-Ch |
Drain-to-Source Voltage [Vdss]: | 30V/-30V |
Drain-Source On Resistance-Max: | 25mΩ/50mΩ |
Rated Power Dissipation: | 1.5|W |
Qg Gate Charge: | 11.7nC/11.4nC |
Package Style: | SOIC-8 |
Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
2,500
USA:
2,500
Factory Lead Time:
12 Weeks
Quantity
Unit Price
2,500
$0.30
5,000
$0.295
10,000
$0.29
12,500+
$0.285
Product Variant Information section
Available Packaging
Package Qty:
2500 per Reel
Package Style:
SOIC-8
Mounting Method:
Surface Mount