BC33725BU in Bag by onsemi | Bipolar (BJT) Transistors | Future Electronics
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Manufacturer Part #

BC33725BU

BC337 Series 45 V CE Breakdown .8 A NPN Epitaxial Silicon Transistor TO-92

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2113
Product Specification Section
onsemi BC33725BU - Technical Attributes
Attributes Table
Polarity: NPN
CE Voltage-Max: 45V
Collector Current Max: 800mA
Power Dissipation-Tot: 625mW
Package Style:  TO-92
Mounting Method: Through Hole
Features & Applications

The BC33725BU is a BC337 Series 45 V CE Breakdown .8 A NPN Epitaxial Silicon Transistor in a TO-92 .Device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA.

 Product Features:

  • Three terminals namely Base,Emitter and Collector
  • Switching and Amplifier Applications
  • Suitable for AF-Driver stages and low power output stages
  • Complement to BC327/BC328
  • Storage Temperature is 55 ~ 150 °C
Read More...
Pricing Section
Global Stock:
7,606
USA:
7,606
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
6 Weeks
Minimum Order:
7606
Multiple Of:
100000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$266.21
USD
Quantity
Unit Price
10,000+
$0.035
Product Variant Information section