
Manufacturer Part #
IRF5305STRLPBF
Single P-Channel 55V 0.06 Ohm 63 nC HEXFET® Power Mosfet - D2PAK
Infineon IRF5305STRLPBF - Product Specification
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PCN Information:
Detailed change information:Subject:Moisture Barrier Bag and Anti-Static shielding bag elimination for MSL1 devices at Tijuana, Mexico.Reason: Standardization of packing material for MSL1 devices at Tijuana, Mexico.Packing Material and Method:OLD:Moisture Barrier Bag + Humidity Indicator Card + Desiccant + Dry Pack andAnti-Static shielding bag + Dry PackNEW:Reel in packing box without Dry Pack
- Updated information marked in BLUE TYPE- Original PCN N? 2023-092-A dated 2023-01-15 (new: 2024-01-15) Product identification Traceability is assured via Wafer lot number & country of diffusion Country of diffusion: ? United States = Infineon Technologies Temecula? Taiwan = EPISIL Technologies Inc.? Malaysia = Infineon Technologies Kulim
Detailed change information:Subject: Change of the wafer production location from Infineon Technologies Temecula, USA to Infineon Technologies Kulim, Malaysia for dedicated G5 P-Channel MOSFET products.Reason:The wafer production of the affected products will be extended to Infineon Technologies Kulim, according to global Infineon production strategy
Part Status:
Infineon IRF5305STRLPBF - Technical Attributes
Fet Type: | P-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 55V |
Drain-Source On Resistance-Max: | 0.06Ω |
Rated Power Dissipation: | 3.8W |
Qg Gate Charge: | 63nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 31A |
Turn-on Delay Time: | 14ns |
Turn-off Delay Time: | 39ns |
Rise Time: | 66ns |
Fall Time: | 63ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 4V |
Technology: | Advanced Process Technology |
Height - Max: | 4.83mm |
Length: | 10.67mm |
Input Capacitance: | 1200pF |
Package Style: | TO-263-3 (D2PAK) |
Mounting Method: | Surface Mount |
Available Packaging
Package Qty:
800 per Reel
Package Style:
TO-263-3 (D2PAK)
Mounting Method:
Surface Mount