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Manufacturer Part #
IRFB4310ZPBF
Single N-Channel 100 V 6 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:50 per Tube Package Style:TO-220-3 (TO-220AB) Mounting Method:Through Hole | ||||||||||
| Date Code: | 2242 | ||||||||||
Product Specification Section
Infineon IRFB4310ZPBF - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
Labeling Change
09/19/2024 Details and Download
Multiple Material Change
12/18/2023 Details and Download
Detailed change information:Subject Phase out of Kyocera KEG300 mold compound for several assembly locations and change of lead finish from tin dip to electroplating at Tijuana, Mexico for dedicated TO220-3 & TO247-3 products.Reason:To ensure continuity of mold compound supply due to Kyocera KEG300 end of life and to further ensure our product performance with lead-free electroplating finish
Part Status:
Active
Active
Infineon IRFB4310ZPBF - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 6mΩ |
| Rated Power Dissipation: | 250W |
| Qg Gate Charge: | 120nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 127A |
| Turn-on Delay Time: | 20ns |
| Turn-off Delay Time: | 55ns |
| Rise Time: | 60ns |
| Fall Time: | 57ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 4V |
| Input Capacitance: | 6860pF |
| Package Style: | TO-220-3 (TO-220AB) |
| Mounting Method: | Through Hole |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
18 Weeks
Quantity
Unit Price
1
$1.11
40
$1.08
150
$1.05
400
$1.02
1,500+
$0.965
Product Variant Information section
Available Packaging
Package Qty:
50 per Tube
Package Style:
TO-220-3 (TO-220AB)
Mounting Method:
Through Hole