
Manufacturer Part #
SI1902CDL-T1-GE3
Dual N-Channel 20 V 0.235 Ohm 0.42 W Surface Mount Mosfet - SC-70-6
Vishay SI1902CDL-T1-GE3 - Product Specification
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Description of Change: To meet the increasing demand for commercial Power MOSFET products, Vishay Siliconix announces the qualification of wafer BGBM process (Backside-Grind and Backside-Metallization) for commercial Low-Voltage Power MOSFETs at in-house Siliconix Philippines Inc.(SPI) facility in Binan, Philippines.Reason for Change: Capacity Expansion
Description of Change: To meet increasing demand with more flexibility for power MOSFETs, Vishay Siliconix announces the qualification of the new solder-plating site, Welnew-Shanghai, in Shanghai city, China. This full release of Welnew-Shnaghai applies to commercial product packages with copper lead-frame assembled in Simconix in Shanghai.Reason for Change: Manufacturing Capacity Expansion
Description of Change: .To meet increasing demand with more flexibility for power MOSFETs, Vishay Siliconix announces the qualification of the new solder-plating site, Welnew-Shanghai, in Shanghai city, China. This full release of Welnew-Shnaghai applies to commercial product packages with copper lead-frame assembled in Simconix in Shanghai.Welnew-Shanghai was founded in 2006 as a leading provider of Hall sensor products, semiconductor process service, and equipments.Welnew-Shanghai has achieved the certifications, including IATF-16949, ISO-9001, and ISO-14001.Reason for Change: Manufacturing Capacity Expansion
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Vishay SI1902CDL-T1-GE3 - Technical Attributes
Fet Type: | Dual N-Ch |
Drain-to-Source Voltage [Vdss]: | 20V |
Drain-Source On Resistance-Max: | 0.235Ω |
Rated Power Dissipation: | 0.42|W |
Qg Gate Charge: | 3nC |
Package Style: | SOT-363 (SC-70-6, SC-88) |
Mounting Method: | Surface Mount |
Available Packaging
Package Qty:
3000 per Reel
Package Style:
SOT-363 (SC-70-6, SC-88)
Mounting Method:
Surface Mount