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STMicroelectronics | STH150N10F7-2

Manufacturer Part #

STH150N10F7-2

N-Channel 100 V 0.0039 Ohm Surface Mount STripFET™ F7 Power Mosfet-H2PAK

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STH150N10F7-2 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 3.9mΩ
Rated Power Dissipation: 250W
Qg Gate Charge: 117nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 110A
Turn-on Delay Time: 33ns
Turn-off Delay Time: 72ns
Rise Time: 57ns
Fall Time: 33ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4.5V
Input Capacitance: 8115pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$1,630.00
USD
Quantity
Unit Price
1,000
$1.63
2,000
$1.62
3,000
$1.61
5,000+
$1.59
Product Variant Information section