
Référence fabricant
IRLR024NTRPBF
Single N-Channel 55 V 0.11 Ohm 15 nC HEXFET® Power Mosfet - TO-252AA
Infineon IRLR024NTRPBF - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Detailed change information:Subject:Moisture Barrier Bag and Anti-Static shielding bag elimination for MSL1 devices at Tijuana, Mexico.Reason: Standardization of packing material for MSL1 devices at Tijuana, Mexico.Packing Material and Method:OLD:Moisture Barrier Bag + Humidity Indicator Card + Desiccant + Dry Pack andAnti-Static shielding bag + Dry PackNEW:Reel in packing box without Dry Pack
Subject Standardization of lot number format.Reason Harmonize and standardize the lot number format across all external production partners.Description: Lot numberOld - Multiple lot number formatsNew - Standardized into a single 11 alphanumeric lot number formatIntended start of delivery 2023-02-10Note: Customers may receive both current and new lot number formats, until existing inventory will be depleted
Statut du produit:
Infineon IRLR024NTRPBF - Caractéristiques techniques
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 55V |
Drain-Source On Resistance-Max: | 0.11Ω |
Rated Power Dissipation: | 45W |
Qg Gate Charge: | 15nC |
Gate-Source Voltage-Max [Vgss]: | 16V |
Drain Current: | 17A |
Turn-on Delay Time: | 7.1ns |
Turn-off Delay Time: | 20ns |
Rise Time: | 74ns |
Fall Time: | 29ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 2V |
Technology: | Si |
Height - Max: | 2.39mm |
Length: | 6.22mm |
Input Capacitance: | 480pF |
Style d'emballage : | TO-252AA |
Méthode de montage : | Surface Mount |
Emballages disponibles
Qté d'emballage(s) :
2000 par Reel
Style d'emballage :
TO-252AA
Méthode de montage :
Surface Mount