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Manufacturer Part #
IRFSL3207ZPBF
Single N-Channel 75 V 4.1 mOhm 120 nC HEXFET® Power Mosfet - TO-262-3
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: |
Product Variant Information section
Available PackagingPackage Qty:50 per Tube Package Style:TO-262 (I2PAK) Mounting Method:Through Hole |
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| Date Code: | 2538 | ||||||||||
Product Specification Section
Infineon IRFSL3207ZPBF - Product Specification
Shipping Information:
Item cannot ship to certain countries.
See List
Item cannot ship to following countries:
Taiwan
HTS Code:
8541.29.00.55
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
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Infineon IRFSL3207ZPBF - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 75V |
| Drain-Source On Resistance-Max: | 4.1mΩ |
| Rated Power Dissipation: | 300|W |
| Qg Gate Charge: | 120nC |
| Package Style: | TO-262 (I2PAK) |
| Mounting Method: | Through Hole |
Pricing Section
Global Stock:
100
USA:
100
Factory Lead Time:
8 Weeks
Quantity
Unit Price
50
$3.63
150
$3.58
500
$3.53
1,000
$3.50
2,000+
$3.45
Product Variant Information section
Available Packaging
Package Qty:
50 per Tube
Package Style:
TO-262 (I2PAK)
Mounting Method:
Through Hole