Orders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.
Manufacturer Part #
IRFSL3207ZPBF
Single N-Channel 75 V 4.1 mOhm 120 nC HEXFET® Power Mosfet - TO-262-3
| | |||||||||||
| | |||||||||||
| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:50 per Tube Package Style:TO-262 (I2PAK) Mounting Method:Through Hole | ||||||||||
| Date Code: | 2502 | ||||||||||
Product Specification Section
Infineon IRFSL3207ZPBF - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
Infineon IRFSL3207ZPBF - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 75V |
| Drain-Source On Resistance-Max: | 4.1mΩ |
| Rated Power Dissipation: | 300|W |
| Qg Gate Charge: | 120nC |
| Package Style: | TO-262 (I2PAK) |
| Mounting Method: | Through Hole |
Pricing Section
Global Stock:
800
USA:
800
Factory Lead Time:
18 Weeks
Quantity
Unit Price
50
$1.40
200
$1.38
500
$1.36
1,250
$1.35
2,000+
$1.33
Product Variant Information section
Available Packaging
Package Qty:
50 per Tube
Package Style:
TO-262 (I2PAK)
Mounting Method:
Through Hole