AIMBG75R027M1HXTMA1 in Reel by Infineon | Silicon Carbide MOSFETs (SiC MOSFETs) | Future Electronics
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Manufacturer Part #

AIMBG75R027M1HXTMA1

SiC,750V, 64A, 027MOHM, N-CH, D2PAK-7

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon AIMBG75R027M1HXTMA1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 750V
Drain Current: 64A
Input Capacitance: 1668pF
Power Dissipation: 273W
Operating Temp Range: -55°C to +175°C
Package Style:  D2PAK-7
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
23 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$6,890.00
USD
Quantity
Unit Price
1,000+
$6.89
Product Variant Information section