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Manufacturer Part #
SCT2H12NZGC11
SCT2H12NZ Series 1700 V 3.7 A 1.5 Ohm N-Channel SiC Power Mosfet - TO-3PFM
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| Mfr. Name: | ROHM | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:30 per Tube Mounting Method:Through Hole | ||||||||||
| Date Code: | 2336 | ||||||||||
Product Specification Section
ROHM SCT2H12NZGC11 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
Wafer Size Change
09/28/2023 Details and Download
Detailed Description Of Change:Before: SiC wafer diameter: 4inchWafer FAB: ROHM APOLLO Co., Ltd. Chikugo plant.After: SiC wafer diameter: 6inchWafer FAB: ROHM APOLLO Co., Ltd. Chikugo plant (No change for Wafer FAB)Reason:To increase production output by enhancing productivity and efficiency- End of production of 4-inch SiC wafers due to the transition to 6inch SiC wafers
Part Status:
Active
Active
ROHM SCT2H12NZGC11 - Technical Attributes
Attributes Table
| Technology: | SiCFET (Silicon Carbide) |
| Product Status: | Active |
| Fet Type: | N-Ch |
| No. of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 1700V |
| Drain Current: | 3.7A |
| Input Capacitance: | 184pF |
| Power Dissipation: | 35W |
| Mounting Method: | Through Hole |
Pricing Section
Global Stock:
3,600
USA:
3,600
On Order:
0
Factory Lead Time:
26 Weeks
Quantity
Unit Price
30
$4.30
90
$4.23
150
$4.20
450
$4.14
750+
$4.09
Product Variant Information section
Available Packaging
Package Qty:
30 per Tube
Mounting Method:
Through Hole