text.skipToContent text.skipToNavigation

Truck-Icon.svg Free shipping within the continental US over $50. Conditions apply

warning.svg Orders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Silicon Carbide MOSFETs (SiC MOSFETs)
  6. SCT2H12NZGC11

ROHM | SCT2H12NZGC11

Manufacturer Part #

SCT2H12NZGC11

SCT2H12NZ Series 1700 V 3.7 A 1.5 Ohm N-Channel SiC Power Mosfet - TO-3PFM

ECAD Model:
Mfr. Name: ROHM
Standard Pkg:
Product Variant Information section
Date Code: 2350
Product Specification Section
ROHM SCT2H12NZGC11 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1700V
Drain Current: 3.7A
Input Capacitance: 184pF
Power Dissipation: 35W
Mounting Method: Through Hole
Pricing Section
Global Stock:
3,600
USA:
3,600
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
30
Multiple Of:
30
Total
$121.20
USD
Quantity
Unit Price
30
$4.04
120
$3.97
300
$3.93
750
$3.89
1,200+
$3.82
Product Variant Information section