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Manufacturer Part #

STH170N8F7-2

N-Channel 80 V 120 A 0.0037 Ohm Surface Mount STripFET™ F7 Power Mosfet - H2PAK

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Date Code: 1623
Product Specification Section
STMicroelectronics STH170N8F7-2 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 80V
Drain-Source On Resistance-Max: 3.7mΩ
Rated Power Dissipation: 250W
Qg Gate Charge: 120nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 120A
Turn-on Delay Time: 38ns
Turn-off Delay Time: 79ns
Rise Time: 53ns
Fall Time: 37ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4.5V
Input Capacitance: 8710pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
1,000
USA:
1,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
1000
Multiple Of:
1000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,410.00
USD
Quantity
Unit Price
1,000
$1.41
2,000
$1.40
4,000
$1.39
5,000+
$1.38