IPG16N10S461ATMA1 in Reel by Infineon | Mosfets | Future Electronics
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Manufacturer Part #

IPG16N10S461ATMA1

100V, 16A, 61mOhm, Dual N-Channel, TDSON 8 / SSO8, AEC-Q101

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2327
Product Specification Section
Infineon IPG16N10S461ATMA1 - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 61mΩ
Rated Power Dissipation: 29W
Qg Gate Charge: 5.4nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 16A
Turn-on Delay Time: 3ns
Turn-off Delay Time: 5ns
Rise Time: 1ns
Fall Time: 5ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2.8V
Technology: OptiMOS
Input Capacitance: 374pF
Package Style:  TDSON-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
5,000
USA:
5,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
5000
Multiple Of:
5000
Total
$2,500.00
USD
Quantity
Unit Price
5,000+
$0.50
Product Variant Information section