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  6. IAUT260N10S5N019ATMA1

Infineon | IAUT260N10S5N019ATMA1

Manufacturer Part #

IAUT260N10S5N019ATMA1

IAUT260Nxx Series 100 V 1.9 mOhm 260 A OptiMOS™-5 Power-Transistor-PG-HSOF-8-1

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2315
Product Specification Section
Infineon IAUT260N10S5N019ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 1.9mΩ
Rated Power Dissipation: 300W
Qg Gate Charge: 128nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 260A
Turn-on Delay Time: 21ns
Turn-off Delay Time: 49ns
Rise Time: 11ns
Fall Time: 38ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3V
Technology: OptiMOS
Input Capacitance: 9100pF
Series: IAUT260
Mounting Method: Surface Mount
Pricing Section
Global Stock:
2,000
USA:
2,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
2000
Multiple Of:
2000
Total
$4,560.00
USD
Quantity
Unit Price
2,000+
$2.28
Product Variant Information section