
Manufacturer Part #
IPB026N06NATMA1
IPB026N06N Series 60 V 100 A 2.6 mOhm Single N-Channel MOSFET - TO-263-3
Product Specification Section
Infineon IPB026N06NATMA1 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
Infineon IPB026N06NATMA1 - Technical Attributes
Attributes Table
Product Status: | Active |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 60V |
Drain-Source On Resistance-Max: | 2.6mΩ |
Rated Power Dissipation: | 3W |
Qg Gate Charge: | 56nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 100A |
Turn-on Delay Time: | 17ns |
Turn-off Delay Time: | 30ns |
Rise Time: | 15ns |
Fall Time: | 8ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 2.8V |
Technology: | OptiMOS |
Input Capacitance: | 4100pF |
Package Style: | TO-263-3 (D2PAK) |
Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
1,000
USA:
1,000
On Order:
0
Factory Lead Time:
18 Weeks
Quantity
Unit Price
1,000
$0.87
2,000
$0.86
3,000
$0.855
4,000
$0.85
5,000+
$0.835
Product Variant Information section
Available Packaging
Package Qty:
1000 per Reel
Package Style:
TO-263-3 (D2PAK)
Mounting Method:
Surface Mount