IPB026N06NATMA1 in Reel by Infineon | Mosfets | Future Electronics
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Manufacturer Part #

IPB026N06NATMA1

IPB026N06N Series 60 V 100 A 2.6 mOhm Single N-Channel MOSFET - TO-263-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2325
Product Specification Section
Infineon IPB026N06NATMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 2.6mΩ
Rated Power Dissipation: 3W
Qg Gate Charge: 56nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 100A
Turn-on Delay Time: 17ns
Turn-off Delay Time: 30ns
Rise Time: 15ns
Fall Time: 8ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2.8V
Technology: OptiMOS
Input Capacitance: 4100pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
1,000
USA:
1,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$870.00
USD
Quantity
Unit Price
1,000
$0.87
2,000
$0.86
3,000
$0.855
4,000
$0.85
5,000+
$0.835
Product Variant Information section