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Infineon | BSC042NE7NS3GATMA1

Manufacturer Part #

BSC042NE7NS3GATMA1

Single N-Channel 75 V 4.2 mOhm 69 nC OptiMOS™ Power Mosfet - TDSON-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2306
Product Specification Section
Infineon BSC042NE7NS3GATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 75V
Drain-Source On Resistance-Max: 4.2mΩ
Rated Power Dissipation: 2.5W
Qg Gate Charge: 69nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 19A
Turn-on Delay Time: 14ns
Turn-off Delay Time: 34ns
Rise Time: 17ns
Fall Time: 9ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3.8V
Technology: OptiMOS
Height - Max: 1.1mm
Length: 5.35mm
Input Capacitance: 3600pF
Package Style:  TDSON-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
55,000
USA:
55,000
On Order:Order inventroy details
20,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$3,850.00
USD
Quantity
Unit Price
5,000+
$0.77
Product Variant Information section