IPW60R099P7XKSA1 in Tube by Infineon | Mosfets | Future Electronics
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Infineon | IPW60R099P7XKSA1

Manufacturer Part #

IPW60R099P7XKSA1

Single N-Channel 600 V 99 mOhm 45 nC CoolMOS™ Power Mosfet - TO-247-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2441
Product Specification Section
Infineon IPW60R099P7XKSA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 0.099Ω
Rated Power Dissipation: 117W
Qg Gate Charge: 45nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 31A
Turn-on Delay Time: 23ns
Turn-off Delay Time: 89ns
Rise Time: 15ns
Fall Time: 5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3.5V
Technology: CoolMOS
Input Capacitance: 1952pF
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
240
USA:
240
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
30
Multiple Of:
30
Total
$59.10
USD
Quantity
Unit Price
30
$1.97
120
$1.94
450
$1.92
1,200
$1.90
3,000+
$1.86
Product Variant Information section