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  6. IKW40N65ET7XKSA1

Infineon | IKW40N65ET7XKSA1

Manufacturer Part #

IKW40N65ET7XKSA1

IKW40N65ET7 Series 650 V 76 A 230.8 W Through Hole IGBT Transistor - PG-TO-247-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IKW40N65ET7XKSA1 - Technical Attributes
Attributes Table
CE Voltage-Max: 650V
Collector Current @ 25C: 76A
Power Dissipation-Tot: 230.8W
Gate - Emitter Voltage: 20V
Pulsed Collector Current: 120A
Collector - Emitter Saturation Voltage: 1.35V
Turn-on Delay Time: 20ns
Turn-off Delay Time: 310ns
Qg Gate Charge: 235nC
Reverse Recovery Time-Max: 85ns
Leakage Current: 100nA
Input Capacitance: 2475pF
Operating Temp Range: -40°C to +175°C
No of Terminals: 3
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
19 Weeks
Minimum Order:
240
Multiple Of:
30
Total
$424.80
USD
Quantity
Unit Price
30
$1.79
120
$1.77
450
$1.74
1,200
$1.72
3,000+
$1.69
Product Variant Information section