MJE182G in Box by onsemi | Bipolar (BJT) Transistors | Future Electronics
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Manufacturer Part #

MJE182G

MJE Series 100 V 3 A NPN Complementary Plastic Silicon Power Transistor TO-225AA

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2423
Product Specification Section
onsemi MJE182G - Technical Attributes
Attributes Table
Polarity: NPN
Type: Power Transistor
CE Voltage-Max: 100V
Collector Current Max: 3A
Power Dissipation-Tot: 12.5W
DC Current Gain-Min: 50
Package Style:  TO-225 (TO-126, SOT-32)
Mounting Method: Through Hole
Features & Applications
The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. The MJE170, MJE171, MJE172 (PNP); MJE180, MJE181, MJE182 (NPN) are complementary devices.

Features:

  • Collector-Emitter Sustaining Voltage
    • VCEO(sus) = 60 Vdc - MJE171, MJE181
    • VCEO(sus) = 80 Vdc - MJE172, MJE182
  • DC Current Gain
    • hFE = 30 (Min) @ IC = 0.5 Adc
    • hFE = 12 (Min) @ IC = 1.5 Adc
  • Current-Gain - Bandwidth Product
    • fT = 50 MHz (Min) @ IC = 100 mAdc
  • Annular Construction for Low Leakages
    • ICBO = 100 nA (Max) @ Rated VCB
  • Pb-Free Packages are Available
Read More...
Pricing Section
Global Stock:
3,742
USA:
3,742
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
9 Weeks
Minimum Order:
1
Multiple Of:
1
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$0.30
USD
Quantity
Unit Price
1
$0.295
100
$0.285
300
$0.28
1,000
$0.275
3,000+
$0.26
Product Variant Information section