SIS412DN-T1-GE3 in Cut Tape by Vishay | Mosfets | Future Electronics
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Manufacturer Part #

SIS412DN-T1-GE3

SiS412DN Series N-Channel 30 V 24 mOhms SMT Power Mosfet - PowerPAK-1212-8

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2017
Product Specification Section
Vishay SIS412DN-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 24mΩ
Rated Power Dissipation: 15.6|W
Qg Gate Charge: 3.8nC
Package Style:  POWERPAK-1212-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
600
USA:
600
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
15 Weeks
Minimum Order:
1
Multiple Of:
1
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$0.61
USD
Quantity
Unit Price
1
$0.61
15
$0.525
75
$0.47
300
$0.425
1,500+
$0.37