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Manufacturer Part #
BSC009NE2LSATMA1
N-Channel 25 V 0.9 mOhm OptiMOS™ Power-MOSFET - PG-TDSON-8
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:5000 per Reel Mounting Method:Surface Mount | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
Infineon BSC009NE2LSATMA1 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
Infineon BSC009NE2LSATMA1 - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 25V |
| Drain-Source On Resistance-Max: | 0.9mΩ |
| Rated Power Dissipation: | 2.5|W |
| Qg Gate Charge: | 126nC |
| Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
18 Weeks
Quantity
Unit Price
5,000
$0.615
10,000+
$0.605
Product Variant Information section
Available Packaging
Package Qty:
5000 per Reel
Mounting Method:
Surface Mount