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STMicroelectronics | STB42N60M2-EP

Manufacturer Part #

STB42N60M2-EP

N-Channel 600 V 87 mOhm 250 W SMT MDmesh™ M2 Mosfet - D²PAK

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code: 2537
Product Specification Section
STMicroelectronics STB42N60M2-EP - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 87mΩ
Rated Power Dissipation: 250W
Qg Gate Charge: 55nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 34A
Turn-on Delay Time: 16.5ns
Turn-off Delay Time: 96.5ns
Rise Time: 9.5ns
Fall Time: 8ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: MDmesh
Input Capacitance: 2370pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
12,000
USA:
12,000
On Order:Order inventroy details
36,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
14 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$3,090.00
USD
Quantity
Unit Price
1,000
$3.09
2,000+
$3.05
Product Variant Information section