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Diodes Incorporated | DMN61D8LVT-13

Manufacturer Part #

DMN61D8LVT-13

DMN61D8LVT Series 60 V 630 mA 1.8 Ohm Dual N-Channel Mosfet - TSOT-26

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Diodes Incorporated DMN61D8LVT-13 - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 1.8Ω
Rated Power Dissipation: 820mW
Qg Gate Charge: 0.74nC
Gate-Source Voltage-Max [Vgss]: 12V
Drain Current: 630mA
Turn-on Delay Time: 131ns
Turn-off Delay Time: 582ns
Rise Time: 301ns
Fall Time: 440ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2V
Input Capacitance: 12.9pF
Package Style:  TSOT-26
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
10000
Multiple Of:
10000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,450.00
USD
Quantity
Unit Price
10,000
$0.145
20,000
$0.144
30,000
$0.143
40,000
$0.142
50,000+
$0.14
Product Variant Information section