

Manufacturer Part #
DMN61D8LVT-13
DMN61D8LVT Series 60 V 630 mA 1.8 Ohm Dual N-Channel Mosfet - TSOT-26
Product Specification Section
Diodes Incorporated DMN61D8LVT-13 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
Diodes Incorporated DMN61D8LVT-13 - Technical Attributes
Attributes Table
Fet Type: | Dual N-Ch |
No of Channels: | 2 |
Drain-to-Source Voltage [Vdss]: | 60V |
Drain-Source On Resistance-Max: | 1.8Ω |
Rated Power Dissipation: | 820mW |
Qg Gate Charge: | 0.74nC |
Gate-Source Voltage-Max [Vgss]: | 12V |
Drain Current: | 630mA |
Turn-on Delay Time: | 131ns |
Turn-off Delay Time: | 582ns |
Rise Time: | 301ns |
Fall Time: | 440ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 2V |
Input Capacitance: | 12.9pF |
Package Style: | TSOT-26 |
Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
12 Weeks
Quantity
Unit Price
10,000
$0.125
20,000
$0.123
30,000
$0.122
50,000+
$0.12
Product Variant Information section
Available Packaging
Package Qty:
10000 per Reel
Package Style:
TSOT-26
Mounting Method:
Surface Mount