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Infineon | IPD65R660CFDAATMA1

Manufacturer Part #

IPD65R660CFDAATMA1

IPD65R660CFDA Series 650 V 6 A 0.66 Ohm Single N-Channel MOSFET - TO-252-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2239
Product Specification Section
Infineon IPD65R660CFDAATMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 0.66Ω
Rated Power Dissipation: 62.5W
Qg Gate Charge: 20nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 6A
Turn-on Delay Time: 9ns
Turn-off Delay Time: 40ns
Rise Time: 8ns
Fall Time: 10ns
Operating Temp Range: -40°C to +150°C
Gate Source Threshold: 4V
Technology: CoolMOS
Input Capacitance: 543pF
Series: CoolMOS CFDA
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$1,762.50
USD
Quantity
Unit Price
2,500
$0.705
5,000
$0.695
7,500
$0.69
10,000+
$0.685
Product Variant Information section