IRF7309TRPBF in Reel by Infineon | Mosfets | Future Electronics
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Manufacturer Part #

IRF7309TRPBF

Dual N/P-Channel 30 V 0.08/0.16 Ohm 25 nC HEXFET® Power Mosfet - SOIC-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2432
Product Specification Section
Infineon IRF7309TRPBF - Technical Attributes
Attributes Table
Fet Type: Dual N/P-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: -30V/30V
Drain-Source On Resistance-Max: 0.08Ω/0.16Ω
Rated Power Dissipation: 1.4W
Qg Gate Charge: 25nC
Gate-Source Voltage-Max [Vgss]: -20V/20V
Drain Current: -3A/4A
Turn-on Delay Time: 6.8ns/11ns
Turn-off Delay Time: 22ns/25ns
Rise Time: 21ns/17ns
Fall Time: 7.7ns/18ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: -1V/1V
Technology: Generation V
Height - Max: 1.75mm
Length: 5mm
Input Capacitance: 520pF/440pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
16,000
USA:
16,000
160,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
4000
Multiple Of:
4000
Total
$940.00
USD
Quantity
Unit Price
4,000
$0.235
16,000+
$0.23
Product Variant Information section