
Manufacturer Part #
IRLML5103TRPBF
Single P-Channel 30 V 1 Ohm 5.1 nC HEXFET® Power Mosfet - SOT-23
Product Specification Section
Infineon IRLML5103TRPBF - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
Location Change
05/20/2024 Details and Download
Detailed change information:Subject Change of the wafer production location from Infineon Technologies Temecula, USA and EPISIL Technologies Inc., Taiwan to Infineon Technologies Kulim, Malaysia for dedicated G5 P-Channel MOSFET products.Reason :The wafer production of the affected products will be transferred to Infineon Technologies Kulim, according to global Infineon production strategy.
Part Status:
Active
Active
Infineon IRLML5103TRPBF - Technical Attributes
Attributes Table
Fet Type: | P-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 30V |
Drain-Source On Resistance-Max: | 1Ω |
Rated Power Dissipation: | 540W |
Qg Gate Charge: | 5.1nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 0.76A |
Turn-on Delay Time: | 10ns |
Turn-off Delay Time: | 23ns |
Rise Time: | 8.2ns |
Fall Time: | 16ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 1V |
Technology: | Generation V |
Height - Max: | 1.12mm |
Length: | 3.04mm |
Input Capacitance: | 75pF |
Package Style: | SOT-23 (SC-59,TO-236) |
Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
597,000
USA:
597,000
Factory Lead Time:
18 Weeks
Quantity
Unit Price
3,000
$0.0567
9,000
$0.0554
15,000
$0.0548
60,000
$0.0531
90,000+
$0.052
Product Variant Information section
Available Packaging
Package Qty:
3000 per Reel
Package Style:
SOT-23 (SC-59,TO-236)
Mounting Method:
Surface Mount