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Infineon | IRFB260NPBF

Manufacturer Part #

IRFB260NPBF

Single N-Channel 200 V 40 mOhm 220 nC HEXFET® Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRFB260NPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 40mΩ
Rated Power Dissipation: 380|W
Qg Gate Charge: 220nC
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
1000
Multiple Of:
50
Total
$1,320.00
USD
Quantity
Unit Price
1
$1.38
40
$1.36
150
$1.34
750
$1.32
2,500+
$1.29
Product Variant Information section