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Manufacturer Part #

MUN5215DW1T1G

MUN5215DW1 Series 1.4 V 100 mA SMT NPN-Pre-Biased Digital Transistor - SOT-363

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2509
Product Specification Section
onsemi MUN5215DW1T1G - Technical Attributes
Attributes Table
Polarity: NPN-Pre-Biased
R1, R2: 10kΩ
Collector Current Max: 100mA
Output Current-Max: 100mA
CE Voltage-Max: 50V
Supply Voltage: 1.4V
Power Dissipation-Tot: 256mW
Collector - Base Voltage: 50V
Collector - Emitter Saturation Voltage: 0.25V
DC Current Gain-Min: 160
Configuration: Dual
Collector - Current Cutoff: 100nA
Operating Temp Range: -55°C to +150°C
Package Style:  SOT-363 (SC-70-6, SC-88)
Mounting Method: Surface Mount
Features & Applications

The MUN5215DW1T1G is a Low power NPN Silicon Surface Mount Transistors with Dual Monolithic Bias Resistor Network; designed to replace a single device and it's external resistor bias network.

It's monolithic bias network consisting of two resistors which eliminates these individual components by integrating them in to a single device.

Features:

  • Simplifies Circuit Design
  • Reduces Board Space
  • Reduces Component Count
  • AEC−Q101 Qualified and PPAP Capable
  • Pb−Free Packages are Available

Applications:

  • Supply line switches
  • Battery charger switches
  • High-side switches for LEDs, drivers and backlights
  • Portable equipment
Pricing Section
Global Stock:
27,000
USA:
27,000
On Order:
0
Factory Stock:Factory Stock:
2
Factory Lead Time:
29 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$90.30
USD
Quantity
Unit Price
3,000
$0.0301
9,000
$0.0293
12,000
$0.0291
30,000
$0.0285
45,000+
$0.0279
Product Variant Information section