2N6798 in Bulk by Infineon | Mosfets | Future Electronics
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Manufacturer Part #

2N6798

HEXFET TRANSISTOR, HiRel - 200V, 5.5A, 0.400 ohm

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon 2N6798 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 0.42Ω
Rated Power Dissipation: 25W
Qg Gate Charge: 42.07nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 5.5A
Turn-on Delay Time: 30ns
Turn-off Delay Time: 50ns
Rise Time: 50ns
Fall Time: 40ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Input Capacitance: 600pF
Series: HEXFET
Package Style:  TO-39
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
10
Multiple Of:
1
Total
$136.90
USD
Quantity
Unit Price
1
$13.86
4
$13.69
15
$13.52
40
$13.40
100+
$13.20
Product Variant Information section