IRF8714TRPBF in Reel by Infineon | Mosfets | Future Electronics
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Manufacturer Part #

IRF8714TRPBF

Single N-Channel 30 V 8.7 mOhm 8.1 nC HEXFET® Power Mosfet - SOIC-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
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Product Specification Section
Infineon IRF8714TRPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 8.7mΩ
Rated Power Dissipation: 2.5W
Qg Gate Charge: 8.1nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 14A
Turn-on Delay Time: 10ns
Turn-off Delay Time: 11ns
Rise Time: 9.9ns
Fall Time: 5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1.8V
Input Capacitance: 1020pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications
The IRF8714TRPBF is a single N-Channel 30 V 2.5 W 8.1nC Hexfet Power Mosfet. Operating temperature ranges from -55°C to 150°C and available in Surface Mount SOIC-8 Package.

Features:

  • Very Low Gate Charge
  • Very Low RDS(on) at 4.5 V VGS
  • Ultra-Low Gate Impedance
  • Fully Characterized Avalanche Voltage and Current
  • 20 V VGS Max. Gate Rating
  • 100% tested for Rg
  • Lead-Free

Applications:

  • Control MOSFET of Sync-Buck Converters used for Notebook Processor Power
  • Control MOSFET for Isolated DC-DC Converters in Networking Systems
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Pricing Section
Global Stock:
0
USA:
0
40,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
13 Weeks
Minimum Order:
4000
Multiple Of:
4000
Total
$596.00
USD
Quantity
Unit Price
4,000
$0.149
8,000
$0.148
12,000
$0.147
16,000
$0.146
20,000+
$0.144
Product Variant Information section