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Infineon | IRF6785MTRPBF

Manufacturer Part #

IRF6785MTRPBF

N-Channel 200 V 100 mOhm 36 nC SMT HEXFET® Power Mosfet - DIRECTFET™ MZ

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2408
Product Specification Section
Infineon IRF6785MTRPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 100mΩ
Rated Power Dissipation: 2.8W
Qg Gate Charge: 26nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 3.4A
Turn-on Delay Time: 6.2ns
Turn-off Delay Time: 7.2ns
Rise Time: 8.6ns
Fall Time: 14ns
Operating Temp Range: -40°C to +150°C
Gate Source Threshold: 5V
Input Capacitance: 1500pF
Package Style:  DIRECTFET
Mounting Method: Surface Mount
Pricing Section
Global Stock:
4,800
USA:
4,800
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
4800
Multiple Of:
4800
Total
$5,616.00
USD
Quantity
Unit Price
4,800+
$1.17
Product Variant Information section