IRFZ34NPBF in Tube by Infineon | Mosfets | Future Electronics
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Infineon | IRFZ34NPBF

Manufacturer Part #

IRFZ34NPBF

Single N-Channel 55 V 0.04 Ohm 34 nC HEXFET® Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2409
Product Specification Section
Infineon IRFZ34NPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 55V
Drain-Source On Resistance-Max: 0.04Ω
Rated Power Dissipation: 68W
Qg Gate Charge: 34nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 29A
Turn-on Delay Time: 7ns
Turn-off Delay Time: 31ns
Rise Time: 49ns
Fall Time: 40ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Advanced Process Technology
Height - Max: 8.77mm
Length: 10.54mm
Input Capacitance: 700pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:Order inventroy details
72,050
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
50
Multiple Of:
50
Total
$13.75
USD
Quantity
Unit Price
50
$0.275
250
$0.265
1,250
$0.255
7,500+
$0.245
Product Variant Information section