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onsemi | FDS6670A

Manufacturer Part #

FDS6670A

N-Channel 30 V 8 mOhm Logic Level PowerTrench Mosfet - SOIC-8

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi FDS6670A - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 8mΩ
Rated Power Dissipation: 1|W
Qg Gate Charge: 21nC
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications

The FDS6670A is 30 V 8 mΩ N-Channel Logic Level MOSFET is produced using advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance

Features:

  • 13 A, 30 V
  • RDS(ON) = 8 mΩ @ VGS = 10 V
  • RDS(ON) = 10 mΩ @ VGS = 4.5 V
  • Fast switching speed
  • Low gate charge
  • High performance trench technology for extremely low RDS(ON)
  • High power and current handling capability 

Applications:

  • Low in-line power loss
  • Fast switching
  • Battery powered applications
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
6 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Total
$787.50
USD
Quantity
Unit Price
2,500
$0.315
5,000
$0.31
7,500
$0.305
12,500+
$0.30
Product Variant Information section