MBT3906DW1T1G in Reel by onsemi | Bipolar (BJT) Transistors | Future Electronics
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onsemi | MBT3906DW1T1G

Manufacturer Part #

MBT3906DW1T1G

MBT Series 40 V 200 mA SMT PNP Silicon Dual General Purpose Transistor - SOT-363

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2509
Product Specification Section
onsemi MBT3906DW1T1G - Technical Attributes
Attributes Table
Polarity: PNP
CE Voltage-Max: 40V
Collector Current Max: 200mA
Power Dissipation-Tot: 150mW
Package Style:  SOT-363 (SC-70-6, SC-88)
Mounting Method: Surface Mount
Features & Applications

The MBT3906DW1T1G is a PNP Silicon Dual General Purpose Transistor, available in a SOT-363 package.

Features:

  • hFE, 100−300
  • Low VCE(sat), ≤ 0.4 V
  • Simplifies Circuit Design
  • Reduces Board Space
  • Reduces Component Count
  • Available in 8 mm, 7−inch/3,000 Unit Tape and Reel
  • AEC−Q101 Qualified and PPAP Capable
  • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Applications:

  • General purpose amplifier applications
Read More...
Pricing Section
Global Stock:
45,000
USA:
45,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
10 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$51.00
USD
Quantity
Unit Price
3,000
$0.017
9,000
$0.0166
15,000
$0.0164
60,000
$0.016
90,000+
$0.0156
Product Variant Information section