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Manufacturer Part #

STD80N6F6

N-Channel 60 V 6.5 mΩ Surface Mount STripFET™ F6 Power Mosfet - TO-252

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STD80N6F6 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 5mΩ
Rated Power Dissipation: 120W
Qg Gate Charge: 147nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 80A
Turn-on Delay Time: 40ns
Turn-off Delay Time: 132ns
Rise Time: 71ns
Fall Time: 40ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4.5V
Input Capacitance: 8325pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
13 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,700.00
USD
Quantity
Unit Price
1
$0.815
15
$0.765
75
$0.735
250
$0.715
1,250+
$0.68
Product Variant Information section